 Photovoltaics
|
Deposition of Microcrystalline Silicon onto Glass by
Microwave Plasma-Enhanced Sputtering
P. Müller, W. M. Holber*, R. Gat*,
W. Henrion, E. Nebauer**, V. Schlosser***, L.
Sieber, and W. Fuhs
Hahn-Meitner-Institut, Rudower Chaussee 5, D-12489
Berlin, Germany, Tel. +49/30/67053310, eMail:
mueller-p@hmi.de
*Applied Science and Technology, Inc.,
35 Cabot Road,Woburn MA 01801, USA, Tel.
+1/781/9335560
**Ferdinand-Braun-Institut für
Höchstfrequenztechnik, Rudower Chaussee 5, D-12489 Berlin, Tel.
+49/30/63922701
***Institut für Materialphysik der
Universität Wien, Strudlhofgasse 4, A-1090 Wien, Tel.
+43/1586/340927
You can translate this
page by the Alta Vista
Translation Service. [ Translate
now ].
- ABSTRACT:
-
To deposit Si in Crystalline modification within reasonable times at
temperatures less/equal 500oC (stability limit of
borosilcate glass) the reacting particles leading to layer growth
have to be supplied with additional energy. For this reason the
technique of microwave plasma-enhanced sputtering (MPES) has been
applied to the deposition of undoped and P-doped Si. In the MPES
method the target material is sputtered into a dense ECR plasma
which causes thhe majority of the species depositing onto the
substrate to consist of ions, rather than neutrals. The Si films
were deposited with a rate of 10 nm/min at temperatures between
350-450oC. In order to stimulate crystalline growth and
to improve the quality of the films hydrogen has been added to the
sputter gas Ar. Film inspection by SEM, measurement of the optical
reflectance and transmittance (0.5-6 eV), Raman scattering, and thin
film XRD confirmed the crystalline modification of the layers with
an average crystallite size of 20-30 nm. Moreover the Si layers have
been characterized by SIMS profiling (to trace H, C, O, Ar, Fe, and
Cr), ESR (1-2x1017 dangling bond spin/cm3) and
measurements of the dark conductivity an the Hall effect.
Keywords: Microcrystalline Si-1: Sputtering-2: Microwave
plasma-3