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IMPLEMENTATION OF PHOTOVOLTAICS IN THE PHYSICS COURSE AT THE UNIVERSITY OF VIENNA

V. Schlosser, G. Heine
Institut für Materialphysik der Universität Wien
A-1090 Wien, Strudlhofgasse 4, Austria, phone (++43 1) 586 3409, e-mail: Viktor.Schlosser@Univie.ac.at


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ABSTRACT:
As part of a second level experimental course in physics students prepare a silicon solar cell. Beginning with a 3cm x 3cm unpolished multicrystalline silicon wafer the students perform a cleaning and polishing step. The n+p-junction is produced by the use of a solid state phosphorous diffusion. For the metallisation of the front and backside aluminum- and silverpastes are used. The antireflection coating consists of a 80nm thick silicon monoxide layer evaporated under high vacuum conditions. Current voltage measurements are carried out in the dark and under illumination. The solar cell parameters, short circuit current density jsc, open circuit voltage Voc, maximal electrical power output Pmax, load resistance Rload and curve fill factor CFF, as well as the current loss mechanism characterized by the diode parameters, saturation current density j0 and diode ideality factor n, the series resistance RS and the shunt conductance GSH are determined. The best cell obtained by the students exhibit a conversion efficiency of more than eight per cent.

Keywords: Education and Training - 1: Multi-crystalline - 2: Silicon - 3


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