Photovoltaics

INVESTIGATIONS OF A NOVEL TYPE OF INVERSION LAYER SILICON SOLAR CELL

A. Breymesser, V. Plunger, M. Ramadori, V. Schlosser
Institut für Materialphysik der Universität Wien
A-1090 Wien, Strudlhofgasse 4, Austria, phone (++43 1) 586 3409, e-mail: Viktor.Schlosser@Univie.ac.at
Ludwig Boltzmann Institut für Festkörperphysik
A-1060 Wien, Kopernikusgasse 15, Austria

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ABSTRACT:

A novel type of inversion layer silicon solar cell was investigated. The cell consists of a highly doped polycrystalline silicon layer - the thickness is about 250nm - which was grown onto the thermally oxidized surface of a monocrystalline n-Si substrate (the oxide thickness is about 100nm). Due to the low sheet resistivity - less than 20Ohms/square - of the polysilicon layer it serves as the front contact of the photovoltaic device. The interferences of the incident light caused by the optical properties of the silicon dioxide/polysilicon system reduces the reflectance to zero at a wavelength of 630nm without any additional antireflection coating. Currently the solar cell output of the devices mainly suffers from the low tunneling probability of the light generated current through the oxide. An improved solar cell design with respect to the optical and electrical properties of the silicon dioxide and the polysilicon layer is suggested.

Keywords: c-Si - 1: Inversion-layer - 2: Polycrystalline - 3