Photovoltaics

INVESTIGATIONS OF POLYCRYSTALLINE SILICON LAYERS DEPOSITED BY HOT WIRE CVD

A. Breymesser, V. Plunger, M. Ramadori, V. Schlosser
Institut für Materialphysik der Universität Wien
A-1090 Wien, Strudlhofgasse 4, Austria, phone (++43 1) 586 3409, e-mail: Viktor.Schlosser@Univie.ac.at

M. Nelhiebel, P. Schattschneider
Institut für Angewandte und Technische Physik, Technische Universität Wien
A-1040 Wien, Wiedner Hauptstraße 8-10, Austria

D.Peiro, C. Voz, J. Bertomeu, J. Andreu
Departament de Fisica Aplicada i Electronica, Universitat de Bercelona
E-08028 Barcelona, Av. Diagonal 647, Spain

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ABSTRACT:

We report about some physical properties of undoped polycrystalline silicon layers deposited at substrate temperatures betweenn 190°C and 275°C by hot-wire CVD on glass substrates. The crystallinity was proofed by Raman- and ultraviolet reflectance spectroscopy. The observed optical band gap was found to be very close to that one of monocrystalline silicon. A dependence of (i) the cluster size of the crystallites (ii) the density of defect states within the bandgap and (iii) the lifetime mobility product on the substrate temperature was found. The highest observed value for the mobility- lifetimeproduct was 9.4x10^-7cm²V^-1.

Keywords: Silicon - 1: Polycrystalline - 2: Photoelectric Properties - 3