 Photovoltaics
|
TEM and EELS microanalysis of pc-Si thin film solar
cells deposited by means of HW CVD
M. Stögera,*, P. Schattschneidera
, V. Schlosserb, R. Schneiderc, H. Kirmsec,
W. Neumannc
aInstitute of Applied and
Technical Physics. Vienna University of Technology. Wiedner Hauptstr.
8-10, A-1040 Wien. Austria
bInstitute for Material
Physics. University of Vienna. Austria
cInstitute of
Physics. Humboldt University of Berlin, Chair of Crystallography.
Germany
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- Abstract
-
A p-i-n doped pc-silicon thin film grown by means of hot wire
chemical vapour deposition (HW CVD) on a zinc oxide film has been
investigated by transmission electron microscopy (TEM) and electron
energy loss spectroscopy (EELS). The structure of both layers, the
ZnO substrate layer as much as the silicon thin film and the
chemical composition at the interface were the subjects of our
investigations. We found that a file of pure silicon with a
thickness of about 5 nm covers the substrate surface. A plausible
model for getting information on the wavyness of the interface
ZnO/pc-Si and the thickness of this pure Si-layer was developed.
-
Keywords:
-
Thin film; Transmission electron microscopy; Electron energy loss
spectroscopy
*Corresponding author. Tel.: +43-1-58801-13720; fax:
+43-1-58801-13798.
E-mail address: M.
Stöger