Photovoltaics

INVESTIGATIONS OF THE ELECTRO-OPTICAL PROPERTIES OF MULTICRYSTALLINE SILICON DURING SOLAR CELL PROCESSING

V. Schlosser¹, W. Markowitsch¹, G. Klinger², P. Bajons¹, S. Chancy³, R. Ebner³, J. Summhammer³

1. Institut für Materialphysik der Universität Wien, A-1090 Wien, Strudlhofgasse 4, Austria.

2. Institut für Meteorologie und Geophysik der Universität Wien, A-1090 Wien, Althanstraße 14, Austria.

3. Atominstitut der Österreichischen Universitäten, A-1020 Wien, Stadionallee 2, Austria.

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ABSTRACT

We used different experimental set ups to detect the optical reflection of free carriers in initial and partly processed multi-crystalline silicon wafer. With these contactless and "preparation-free" characterization tools we monitored the spatially resolved diffusion length of photoexcited carriers at each step of the solar cell's preparation cycle. A significant change in the distribution of defects was observed. The results are used to (i) improve the steps of solar cell preparation and (ii) to predict an optimized lay out of the front metal grid for each cell depending on its individual defect distribution.

Keywords:

Photoelectric Properties, Silicon, Manufacturing and Processing.

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