The Performance of Silicon Solar Cells Exposed to a Simulated Low Earth Orbit Plasma Environment: Laboratory Ground Tests



Afaf M. Abd El-Hameed1, M. Sabry1,2, Ahmed Ghitas1, Fatma S. El-Tokhy3, Viktor Schlosser4

1 National Research Institute of Astronomy and Geophysics, Cairo, Egypt.

2 Physics Department, College of Applied Science, Umm Al-Qura University, Mecca, Saudi Arabia.

3 Faculty of Engineering, Zagazig University, Zagazig, Egypt.

4 Faculty of Physics, Vienna University, Vienna, Austria.


We have studied the effects of a low earth orbit (LEO) plasma environment on the performance of solar cells. Laboratory ground tests were used to simulate the properties of a low-energy LEO plasma. A Penning plasma source was used to generate plasma from an argon (Ar) gas flow at low pressure (∼10-5 torr) through a vacuum chamber. Diagnostic tools were used to investigate the plasma conditions and their effects on six silicon (Si) solar cells located in the chamber. Alternating current conditions for both biased and unbiased monocrystalline Si solar cells produced from n/p terrestrial cells with deep junctions were investigated after exposure to plasma fluence for different times up to 14 h. The results obtained confirmed variation of the performance of the cells samples as a consequence of exposure to the plasma.

Key words: LEO-plasma, Si solar cell, ground test, analysis


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