Electrical and Optical Properties of Tin Oxide Layers Prepared by Physical Vapor Deposition

V. Schlosser, G.Wind

• Ludwig Boltzmann Institut für Festkörperphysik, Wien

• Institut für Festkörperphysik University of Vienna

• A-1060 Wien, Kopernikusgasse 15 (AUSTRIA)

ABSTRACT. We have prepared amorphous 90nm thick tin dioxide layers by means of a physical vapor deposition method. Elemental tin is evaporated in an oxygen abnosphere onto about 300 degrees Centigrade hot substrates cut from borosilicate glass and silicon. Free carrier concentrations as high as 3x10²⁰cm^-3 are obtained by vacancy doping which was done by properly adjusting oxygen partial pressure, tin partial pressure and subsequent annealing conditions. Hall mobility of our samples varies between 5cm²/Vsec and 13cm²/Vsec. Transmission spectra show that absorption due to the band gap transition arises about 0.5eV above the one in polycrystalline tin dioxide layers.