An Approach to Solargrade Silicon Layers Epitaxially Grown on mg Silicon Substrates

V. Schlosser, F. Kuchar, K. Seeger

• Ludwig Boltzmann Institut für Festkörperphysik, Wien

• Institut für Festkörperphysik Universität Wien, Austria^*

Summary
We report about a study on the preparation of mg-Si substrates for growing silicon solar cells by CVD. Two processes for preparing mg-Si substrates are investigated: (1) The substrate is etched to a thickness which is in the range of the grown layer thickness. (2) Prior to deposition, a gettering process with a-Si is applied to the substrates. The applicability of a-Si gettering to silicon of varying purity has been demonstrated by results from I-V measurements and photoresponse measurements of pn-junctions prepared on these substrates.

^*Work supported by Shell-Austria, the Forschungsforderungsfonds der Gewerblichen Wirtschaft, Austria, and the Bundesministerium für Wissenschaft und Forschung, Austria.