Local Characterization of Multicrystalline Silicon Wafers and Solar Cells



V. Schlosser1, P. Bajons1, R. Ebner1, J. Summhammer2, G. Klinger3

  1. Institut für Materialphysik, University of Vienna, Strudlhofgasse 4, A-1090 Wien, AUSTRIA

  2. Atominstiut der Österreichischen Universitäten, Stadionallee 2, A-1020 Wien, AUSTRIA

  3. Institut für Meteorologie und Geophysik, University of Vienna, Althanstrasse 14, A-1090 Wien, AUSTRIA




ABSTRACT: The current voltage characteristics of multicrystalline solar cells with individually designed front contact grids under different bias light conditions in the temperature range of 300 K to 340 K were investigated. Cells with a grid placed predominately on grain boundaries exhibit higher conversion efficiencies than cells where a great portion of the grid covers crystallites. The diode loss current observed for the first type of cells is governed by a thermal activation energy which is about 30 meV larger than found for other cells. This is attributed to a local increase of the recombination center density within grain boundaries.

Keywords: Multi-Crystalline, Silicon, Solar Cell Efficiencies

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