 Photovoltaics
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INVESTIGATIONS ON MICROSTRUCTURE AND MICROCHEMISTRY
OF POLYCRYSTALLINE SILICON MATERIALS FOR SOLAR CELLS
M. Stöger1 , P. Schattschneider1
, W. Markowitsch2 , V. Schlosser2 , R.
Schneider3 , H. Kirmse3 , W. Neumann3
Institute of Applied
and Technical Physics, Vienna University of Technology, Austria
Institute for
Material Physics, University of Vienna, Austria
Humboldt University of Berlin, Institute of
Physics, Chair of Crystallography, Germany
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- ABSTRACT:
-
A p-i-n doped microcrystalline-silicon thin film grown by means of
hot wire chemical vapour deposition (HW CVD) on a zinc oxide film
was investigated by transmission electron microscopy (TEM) and
electron energy loss spectroscopy (EELS). The structure of both
layers, the ZnO substrate layer as well as the silicon thin film,
and the chemical composition at the interface were the subjects of
our investigations. We observed that a layer of pure (nearly
oxygen-free) silicon with a thickness of about 5 nm covered the
substrate surface. A reliable model to derive information about the
texture of the interface between ZnO and microcrystalline-Si, the
origin and the thickness of the oxygen-poor Si-layer was developed.
Keywords: Micro Crystalline Silicon - 1: ZnO - 2: Thin Film -
3