 Photovoltaics
|
INVESTIGATIONS OF EVAPORATED FRONT CONTACTS ALONG
THE GRAIN BOUNDARIES OF MULTICRYSTALLINE SILICON SOLAR CELLS
V. Schlosser1, R. Ebner2, W.
Markowitsch1, P. Bajons1, G. Klinger3,
A. A. El-Amin1, J. Summhammer2
Institut für
Materialphysik der Universität Wien, A-1090 Wien,
Strudlhofgasse 4, Austria.
Atominstitut der
Österreichischen Universitäten, A-1020 Wien, Stadionallee
2, Austria.
Institut für Meteorologie und Geophysik der
Universität Wien, A-1090 Wien, Althanstraße 14, Austria.
You can translate this
page by the Alta Vista
Translation Service. [ Translate
now ].
- ABSTRACT
-
A series of sets of multicrystalline silicon solar cells have been
prepared. One cell of each set was equipped with a front contact
grid along the grain boundaries. A second cell was equipped with the
same grid but rotated by 90 degrees and onto the third cell a
geometrical standard grid was applied. The grids were either
prepared by plotting silver ink lines and subsequent burn in or by
photolithographically structured Ni/Ag layers deposited by
evaporation or a galvanic process. No passivation or protection
against reflection losses were applied. A statistical evaluation of
the solar cell parameters for two illumination intensities in a
temperature range between 295 K and 330 K was done. At room
temperature the gain of maximum output power for cells with the grid
on the grain boundaries for high and low light intensities was 1.17
and 1.15, respectively, compared with cells having a standard grid.
The average linear temperature coefficient for the power output was
determined to be -0.80 %K-1 for cells with a grain
boundary grid and -0.74 %K-1 for cells with a standard
grid. For one cell prepared by the photolithographic method a
maximum power output of more than 10 mWcm-2 was observed
under 1 kWm-2 irradiation at ambient temperature.
-
Keywords:
-
Silicon - 1: Multi-Crystalline - 2: Contact - 3.