Photovoltaics

Kelvin probe measurements of microcrystalline silicon on a nanometer scale using SFM

A. Breymesser^a, V. Schlosser^a, D. Peiro^b, C. Voz^b, J. Bertomeu^b, J. Andreu^b, J. Summhammer^c
aInstitute for Material Physics, University of Vienna, Strudlhofgasse 4, A-1090 Vienna, Austria
^bDepartament de Fisica Aplicada i Optica, Universitat de Barcelona, Av. Diagonal 647, E-08028 Barcelona, Spain
^cAtom Institute of the Austrian Universities, Stadionallee 2, A-1020 Vienna, Austria

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ABSTRACT:

Work function measurements on cross-sectioned microcrystalline pin silicon solar cells deposited by Hot-Wire CVD are presented. The experiment is realized by combining a modifed Kelvin probe experiment and a scanning force microscope. The measured surface potential revealed that the built-in electric drift field is weak in the middle of the compensated intrinsic layer. A graded donor distribution and a constant boron compensation have to be assumed within the intrinsic layer in order to obtain coincidence of the measurements and simulations. The microcrystalline p-silicon layer and the n-type transparent conducting oxide form a reverse polarized diode in series with the pin diode.

Keywords: Microcrystalline silicon; Kelvin probe microscopy; Nanopotentiometry; Thin film solar cells; Surface potential