|
|
|
|
|
|
|
|
|
| Article Abstract |   |
|
 |
|
 |
|||
 |
Online ISSN: 1521-3951 Print ISSN: 0370-1972 © 1999 WILEY-VCH Verlag Berlin GmbH, Fed. Rep. of Germany |
|
| Cross Section Potentiometry of Doped Silicon Structures Using SFM |
| A. Breymesser *, V. Schlosser 1, J. Summhammer 2 |
| 1Institute for Material Physics, University of Vienna, Strudlhofgasse 4, A-1090 Vienna, Austria 2Atom Institute of the Austrian Universities, Stadionallee 2, A-1020 Vienna, Austria |
| email: A. Breymesser (e8727675@student.tuwien.ac.at) |
*Correspondence to A. Breymesser, 1Institute for Material Physics, University of Vienna, Strudlhofgasse 4, A-1090 Vienna, Austria
| Abstract |
| The surface work function measurement of doped silicon structures by using an adapted commercially available SFM (scanning force microscope) is presented. The investigation of a well defined ion-implanted sample for testing the measurement method is described. Deviations of the measured work function values from the theoretical expectations are discussed and interpreted. Furthermore the cross-sectional measurement of a microcrystalline silicon p-i-n diode structure for photovoltaic applications is presented. Contrast can be achieved due to different dopants and the built-in electric drift field between p- and n-doped regions. The potential to judge the quality of diode structures and to suggest improvements for the deposition process is stated. |
 |
Wiley InterScience is a member of CrossRef
