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Local Characterization Of Multicrystalline Silicon Wafers And Solar Cells

Viktor Schlosser1, Milena Dineva1, Peter Bajons1, Rita Ebner2, Johann Summhammer2, Gerhard Klinger3

  1. Institut für Materialphysik der Universität Wien, A-1090 Wien, Strudlhofgasse 4, Austria.

  2. Atominstitut der Österreichischen Universitäten, A-1020 Wien, Stadionallee 2, Austria.

  3. Institut für Meteorologie und Geophysik der Universität Wien, A-1090 Wien, Althanstraße 14, Austria.

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ABSTRACT
The current voltage characteristics of multicrystalline solar cells with individually designed front contact grids under different bias light conditions in the temperature range of 300 K to 340 K were investigated. Cells with a grid placed predominately on grain boundaries exhibit higher conversion efficiencies than cells where a great portion of the grid covers crystallites. The diode loss current observed for the first type of cells is governed by a thermal activation energy which is about 30 meV larger than found for other cells. This is attributed to a local increase of the recombination center density within grain boundaries.

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