Electronic Properties of Semi-Insulating GaP:Cu

C. Eder, V. Schlosser

• L. Boltzmann Institut für Festkörperphysik, Kopernikusg. 15, A-1060 Wien and

• Institut für Festkörperphysik, Universität Wien, Strudlhofg. 4, A-1090 Wien, Austria

Theoretical calculations which model the influence of Cu precipitates on the behavior of free carriers in Cu diffused GaP are compared with experimental results obtained in earlier studies. We come to the conclusion that the large reduction of carriers seen in n-type GaP is mostly governed by a compensation mechanism. At high temperatures the mobility, however, is mainly reduced by scattering of fre carriers from space charge regions surrounding metallic precipitates and is found to be dominated by a term ∝ T ^½